CY62167GE Description
CY62167G and CY62167GE are high-performance CMOS, low-power (MoBL®) SRAM devices with embedded ECC[1]. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62167GE device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle.
CY62167GE Key Features
- Ultra-low standby current
- Typical standby current: 5.5 A
- Maximum standby current: 16 A
- High speed: 45 ns/55 ns
- Embedded error-correcting code (ECC) for single-bit error correction
- Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
- 1.0-V data retention
- Transistor-transistor logic (TTL) patible inputs and outputs
- Error indication (ERR) pin to indicate 1-bit error detection and correction
- 48-pin TSOP I package configurable as 1M × 16 or 2M × 8 SRAM