Datasheet Details
| Part number | CY62167GE |
|---|---|
| Manufacturer | Cypress (now Infineon) |
| File Size | 666.22 KB |
| Description | 16-Mbit (1M Words x 16 Bit) Static RAM |
| Datasheet |
 CY62167GE Datasheet
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General Description
CY62167G and CY62167GE are high-performance CMOS, low-power (MoBL®) SRAM devices with embedded ECC[1].
Both devices are offered in single and dual chip enable options and in multiple pin configurations.
Key Features
- Ultra-low standby current.
- Typical standby current: 5.5 A.
- Maximum standby current: 16 A.
- High speed: 45 ns/55 ns.
- Embedded error-correcting code (ECC) for single-bit error correction.
- Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
- 1.0-V data retention.
- Transistor-transistor logic (TTL) compatible inputs and outputs.
- Error indication (ERR) pin to indicate 1-bit error detection and correction.
- 48-pin TSOP I package con.