CY62167E Overview
Key Features
- Configurable as 1 M × 16 or as 2 M × 8 SRAM
- Very high speed: 45 ns
- Wide voltage range: 4.5 V to 5.5 V
- Ultra low standby power ❐ Typical standby current: 1.5 µA ❐ Maximum standby current: 12 µA
- Ultra low active power ❐ Typical active current: 2.2 mA at f = 1 MHz
- Easy memory expansion with CE1, CE2, and OE features
- Automatic power-down when deselected
- CMOS for optimum speed and power
- Offered in 48-pin TSOP I package
