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CY62167E - 16-Mbit (1M x 16 / 2M x 8) Static RAM

General Description

The CY62167E is a high performance CMOS static RAM organized as 1 M words by 16-bits/2 M words by 8-bits.

Key Features

  • Configurable as 1 M × 16 or as 2 M × 8 SRAM.
  • Very high speed: 45 ns.
  • Wide voltage range: 4.5 V to 5.5 V.
  • Ultra low standby power.
  • Typical standby current: 1.5 µA.
  • Maximum standby current: 12 µA.
  • Ultra low active power.
  • Typical active current: 2.2 mA at f = 1 MHz.
  • Easy memory expansion with CE1, CE2, and OE features.
  • Automatic power-down when deselected.
  • CMOS for optimum speed and power.
  • Offered in 48-pin TSOP I package Functional Descr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62167E MoBL® 16-Mbit (1 M × 16 / 2 M × 8) Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features ■ Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA ❐ Maximum standby current: 12 µA ■ Ultra low active power ❐ Typical active current: 2.2 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power-down when deselected ■ CMOS for optimum speed and power ■ Offered in 48-pin TSOP I package Functional Description The CY62167E is a high performance CMOS static RAM organized as 1 M words by 16-bits/2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current.