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CY62162G Datasheet 16-mbit (512k X 32) Static Ram

Manufacturer: Cypress (now Infineon)

Overview: CY62162G/CY62162GE MoBL 16-Mbit (512K × 32) Static RAM with Error-Correcting Code (ECC) 16-Mbit (512K × 32) Static RAM with Error-Correcting Code.

General Description

The CY62162G and CY62162GE devices are high performance CMOS MoBL SRAM organized as 512K words by 32-bits.

Both CY62162G and CY62162GE are available with dual chip enables.

CY62162GE includes an error indication pin that signals the host processor in the case of a single bit error-detection and correction event.

Key Features

  • Ultra-low standby power.
  • Typical standby current: 5.5 A.
  • Maximum standby current: 16 A.
  • High speed: 45 ns/55 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V.
  • 1.0-V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Easy memory expansion with CE1 and CE2 features.
  • Available in.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY62162GE 16-Mbit (512K x 32) Static RAM
CY62167G 16-Mbit (1M Words x 16 Bit) Static RAM
CY62167G-Automotive 16-Mbit (1M Words x 16-Bit) Static RAM
CY62167GE 16-Mbit (1M Words x 16 Bit) Static RAM
CY62146DV30 4M Bit Static RAM
CY62146G 4-Mbit (256K words x 16 bit) Static RAM
CY62146G-MoBL 4-Mbit (256K words x 16 bit) Static RAM
CY62146GE 4-Mbit (256K words x 16 bit) Static RAM
CY62146GESL 4-Mbit (256K words x 16 bit) Static RAM
CY62146GN 4-Mbit (256K x 16) Static RAM

CY62162G Distributor