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CY62168G Datasheet 16-mbit (2m Words X 8 Bits) Static Ram

Manufacturer: Cypress (now Infineon)

Overview: CY62168G/CY62168GE MoBL® 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code.

General Description

CY62168G and CY62168GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

The CY62168GE device includes an error indication pin that signals a single-bit error-detection and correction event dur

Key Features

  • Ultra-low standby power.
  • Typical standby current: 5.5 A.
  • Maximum standby current: 16 A.
  • High speed: 45 ns/55 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0 V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Available in Pb-free 48-ball VFBGA package Functio.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY62168GE 16-Mbit (2M words x 8 bits) Static RAM
CY62168DV30 16-Mbit (2048K x 8) Static RAM
CY62168EV30 16-Mbit (2 M x 8) Static RAM
CY62167DV18 16M (1024K x 16) Static RAM
CY62167DV20 16-Mb (1024K x 16) Static RAM
CY62167DV30 16-Mbit (1M x 16) Static RAM
CY62167E 16-Mbit (1M x 16 / 2M x 8) Static RAM
CY62167EV18 16-Mbit (1M x 16) Static RAM
CY62167EV30 16-Mbit (1M x 16 / 2M x 8) Static RAM
CY62126ESL 1-Mbit (64 K x 16) Static RAM

CY62168G Distributor