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CY7S1049GE - 4-Mbit (512K words x 8 bit) Static RAM

Download the CY7S1049GE datasheet PDF. This datasheet also covers the CY7S1049G variant, as both devices belong to the same 4-mbit (512k words x 8 bit) static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY7S1049G/CY7S1049GE[1] is a high-performance PowerSnooze™ static RAM organized as 512K words × 8 bits.

Key Features

  • High speed.
  • Access time (tAA) = 10 ns / 15 ns.
  • Ultra-low power Deep-Sleep (DS) current.
  • IDS = 15 µA.
  • Low active and standby currents.
  • Active Current ICC = 38-mA typical.
  • Standby Current ISB2 = 6-mA typical.
  • Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • Embedded ECC for single-bit error correction[1, 2].
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • 1.0-V data retention.
  • TT.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7S1049G-Cypress.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7S1049G CY7S1049GE 4-Mbit (512K words × 8-bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC) 4-Mbit (512K words × 8-bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC) Features ■ High speed ❐ Access time (tAA) = 10 ns / 15 ns ■ Ultra-low power Deep-Sleep (DS) current ❐ IDS = 15 µA ■ Low active and standby currents ❐ Active Current ICC = 38-mA typical ❐ Standby Current ISB2 = 6-mA typical ■ Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ Embedded ECC for single-bit error correction[1, 2] ■ Error indication (ERR) pin to indicate 1-bit error detection and correction ■ 1.