CY7S1049G Datasheet 4-Mbit (512K words x 8 bit) Static RAM

Manufacturer: Cypress (now Infineon)

CY7S1049G 4-mbit (512k words x 8 bit) static ram by Cypress (now Infineon) - Datasheet Preview

Datasheet Details

Part number	CY7S1049G
Manufacturer	Cypress (now Infineon)
File Size	553.84 KB
Description	4-Mbit (512K words x 8 bit) Static RAM
Datasheet	CY7S1049G Datasheet

General Description

The CY7S1049G/CY7S1049GE[1] is a high-performance PowerSnooze™ static RAM organized as 512K words × 8 bits.

This device

Overview

CY7S1049G CY7S1049GE 4-Mbit (512K words × 8-bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC) 4-Mbit (512K words × 8-bit) Static RAM with PowerSnooze™ and Error Correcting Code.

Key Features

High speed.
Access time (tAA) = 10 ns / 15 ns.
Ultra-low power Deep-Sleep (DS) current.
IDS = 15 µA.
Low active and standby currents.
Active Current ICC = 38-mA typical.
Standby Current ISB2 = 6-mA typical.
Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
Embedded ECC for single-bit error correction[1, 2].
Error indication (ERR) pin to indicate 1-bit error detection and correction.
1.0-V data retention.
TT.

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