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CY7S1049GE

Manufacturer: Cypress (now Infineon)

CY7S1049GE datasheet by Cypress (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

CY7S1049GE datasheet preview

CY7S1049GE Datasheet Details

Part number CY7S1049GE
Datasheet CY7S1049GE CY7S1049G Datasheet (PDF)
File Size 553.84 KB
Manufacturer Cypress (now Infineon)
Description 4-Mbit (512K words x 8 bit) Static RAM
CY7S1049GE page 2 CY7S1049GE page 3

CY7S1049GE Overview

The CY7S1049G/CY7S1049GE[1] is a high-performance PowerSnooze™ static RAM organized as 512K words × 8 bits.

CY7S1049GE Key Features

  • High speed
  • Access time (tAA) = 10 ns / 15 ns
  • Ultra-low power Deep-Sleep (DS) current
  • IDS = 15 µA
  • Low active and standby currents
  • Active Current ICC = 38-mA typical
  • Standby Current ISB2 = 6-mA typical
  • Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
  • Embedded ECC for single-bit error correction[1, 2]
  • Error indication (ERR) pin to indicate 1-bit error detection and correction
Cypress (now Infineon) logo - Manufacturer

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CY7S1049GE Distributor

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