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CY7S1049GE - 4-Mbit (512K words x 8 bit) Static RAM

Download the CY7S1049GE datasheet PDF (CY7S1049G included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 4-mbit (512k words x 8 bit) static ram.

Description

The CY7S1049G/CY7S1049GE[1] is a high-performance PowerSnooze™ static RAM organized as 512K words × 8 bits.

Features

  • High speed.
  • Access time (tAA) = 10 ns / 15 ns.
  • Ultra-low power Deep-Sleep (DS) current.
  • IDS = 15 µA.
  • Low active and standby currents.
  • Active Current ICC = 38-mA typical.
  • Standby Current ISB2 = 6-mA typical.
  • Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • Embedded ECC for single-bit error correction[1, 2].
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • 1.0-V data retention.
  • TT.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7S1049G-Cypress.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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CY7S1049G CY7S1049GE 4-Mbit (512K words × 8-bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC) 4-Mbit (512K words × 8-bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC) Features ■ High speed ❐ Access time (tAA) = 10 ns / 15 ns ■ Ultra-low power Deep-Sleep (DS) current ❐ IDS = 15 µA ■ Low active and standby currents ❐ Active Current ICC = 38-mA typical ❐ Standby Current ISB2 = 6-mA typical ■ Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ Embedded ECC for single-bit error correction[1, 2] ■ Error indication (ERR) pin to indicate 1-bit error detection and correction ■ 1.
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