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CY7S1041GE Datasheet

Manufacturer: Cypress (now Infineon)
CY7S1041GE datasheet preview

CY7S1041GE Details

Part number CY7S1041GE
Datasheet CY7S1041GE CY7S1041G Datasheet (PDF)
File Size 512.76 KB
Manufacturer Cypress (now Infineon)
Description 4-Mbit (256K words x 16 bit) Static RAM
CY7S1041GE page 2 CY7S1041GE page 3

CY7S1041GE Overview

The CY7S1041G is a high-performance PowerSnooze™ static RAM organized as 256K words × 16 bits.

CY7S1041GE Key Features

  • High speed
  • Access time (tAA) = 10 ns / 15 ns
  • Ultra-low power Deep-Sleep (DS) current
  • IDS = 15 µA
  • Low active and standby currents
  • Active Current ICC = 38-mA typical
  • Standby Current ISB2 = 6-mA typical
  • Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
  • Embedded ECC for single-bit error correction[1]
  • 1.0-V data retention

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