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CY14B108N - 8-Mbit (1024 K x 8/512 K x 16) nvSRAM

Download the CY14B108N datasheet PDF. This datasheet also covers the CY14B108L variant, as both devices belong to the same 8-mbit (1024 k x 8/512 k x 16) nvsram family and are provided as variant models within a single manufacturer datasheet.

General Description

The Cypress CY14B108L/CY14B108N is a fast static RAM (SRAM), with a nonvolatile element in each memory cell.

Key Features

  • 20 ns, 25 ns, and 45 ns access times.
  • Internally organized as 1024 K × 8 (CY14B108L) or 512 K ×16 (CY14B108N).
  • Hands off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM initiated by software or power-up.
  • Infinite Read, Write, and RECALL cycles.
  • 1 million STORE cycles to QuantumTrap.
  • 20 year data retention.
  • Single 3 V +20.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY14B108L-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY14B108K 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B108L 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B108M 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14B101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY14B108L CY14B108N 8-Mbit (1024 K × 8/512 K × 16) nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features ■ 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108L) or 512 K ×16 (CY14B108N) ■ Hands off automatic STORE on power-down with only a small capacitor ■ STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down ■ RECALL to SRAM initiated by software or power-up ■ Infinite Read, Write, and RECALL cycles ■ 1 million STORE cycles to QuantumTrap ■ 20 year data retention ■ Single 3 V +20, –10 operation ■ Industrial temperature ■ Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) ■ Pb-free and restriction of hazardous substances (RoHS) compliant Functional