CY14B108N, CY14B108L - 8-Mbit (1024 K x 8/512 K x 16) nvSRAM

Cypress Semiconductor

Datasheet Details

Part number	CY14B108N, CY14B108L
Manufacturer	Cypress Semiconductor
File Size	605.00 KB
Description	8-Mbit (1024 K x 8/512 K x 16) nvSRAM
Datasheet	CY14B108L-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY14B108N, CY14B108L. Please refer to the document for exact specifications by model.

The Cypress CY14B108L/CY14B108N is a fast static RAM (SRAM), with a nonvolatile element in each memory cell.

20 ns, 25 ns, and 45 ns access times.
Internally organized as 1024 K × 8 (CY14B108L) or 512 K ×16 (CY14B108N).
Hands off automatic STORE on power-down with only a small capacitor.
STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down.
RECALL to SRAM initiated by software or power-up.
Infinite Read, Write, and RECALL cycles.
1 million STORE cycles to QuantumTrap.
20 year data retention.
Single 3 V +20.

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Other Datasheets by Cypress Semiconductor

CY14B108K - 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B108L - 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B108M - 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B101I - 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14B101J - 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
CY14B101K - 1 Mbit (128K x 8) nvSRAM

Published: Jun 17, 2018 |