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CY14V116G7 - 16-Mbit nvSRAM

Download the CY14V116G7 datasheet PDF. This datasheet also covers the CY14V116F7 variant, as both devices belong to the same 16-mbit nvsram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 16-Mbit nonvolatile static random access memory (nvSRAM).
  • Performance up to 33 MT/s per I/O.
  • Maximum data throughput using ×16 bus.
  • 528 Mbps.
  • Industry-standard asynchronous NAND Flash interface with reduced instruction set.
  • Shared address, data, and command bus.
  • Address and command bus is 8 bits.
  • Command is sent in one or two command cycles.
  • Address is sent in five address cycles.
  • Data bus width is ×8 or ×16 bits.
  • Modes.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY14V116F7-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY14V116F7 CY14V116G7 16-Mbit nvSRAM with Asynchronous NAND Interface 16-Mbit nvSRAM with Asynchronous NAND Interface Features ■ 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ Performance up to 33 MT/s per I/O ❐ Maximum data throughput using ×16 bus – 528 Mbps ❐ Industry-standard asynchronous NAND Flash interface with reduced instruction set ❐ Shared address, data, and command bus • Address and command bus is 8 bits • Command is sent in one or two command cycles • Address is sent in five address cycles • Data bus width is ×8 or ×16 bits ■ Modes of operation: ❐ Asynchronous NAND Interface I/O with 30-ns access time ❐ Status Register with a software method for detecting the following: • Nonvolatile STORE completion • Pass/Fail condition of previous command • Write protect status