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CY62137FV18 - 2-Mbit (128K x 16) Static RAM

General Description

of read and write modes.

For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

The CY62137FV18 is a high performance CMOS static RAM organized as 128K words by 16 bits.

Key Features

  • Very high speed: 55 ns Wide voltage range: 1.65 V.
  • 2.25 V Pin compatible with CY62137CV18 Ultra low standby power.
  • Typical standby current: 1 A.
  • Maximum standby current: 5 A Ultra low active power.
  • Typical active current: 1.6 mA @ f = 1 MHz Ultra low standby power Easy memory expansion with CE and OE features Automatic power down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Byte power-down feature Av.

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Full PDF Text Transcription for CY62137FV18 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CY62137FV18. For precise diagrams, and layout, please refer to the original PDF.

CY62137FV18 MoBL® 2-Mbit (128K x 16) Static RAM www.DataSheet4U.com Features ■ ■ ■ ■ Very high speed: 55 ns Wide voltage range: 1.65 V – 2.25 V Pin compatible with CY6213...

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: 55 ns Wide voltage range: 1.65 V – 2.25 V Pin compatible with CY62137CV18 Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 5 A Ultra low active power ❐ Typical active current: 1.6 mA @ f = 1 MHz Ultra low standby power Easy memory expansion with CE and OE features Automatic power down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Byte power-down feature Available in a Pb-free 48-Ball Very fine ball grid package (VFBGA) package ■ is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones.