CY62137FV18 Description
For best practice remendations, refer to the Cypress application note AN1064, SRAM System Guidelines. Functional Description The CY62137FV18 is a high performance CMOS static RAM organized as 128K words by 16 bits.
CY62137FV18 Key Features
- Very high speed: 55 ns Wide voltage range: 1.65 V
- 2.25 V Pin patible with CY62137CV18 Ultra low standby power
- Typical standby current: 1 A
- Maximum standby current: 5 A Ultra low active power
- Typical active current: 1.6 mA @ f = 1 MHz Ultra low standby power Easy memory expansion with CE and OE features Automat
- is ideal for providing More Battery Life™ (MoBL) in portable