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CY62158CV30 - (CY62158CV25 - CY62158CV33) 1024K x 8 MoBL Static RAM

Download the CY62158CV30 datasheet PDF. This datasheet also covers the CY62158CV25 variant, as both devices belong to the same (cy62158cv25 - cy62158cv33) 1024k x 8 mobl static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The CY62158CV25/30/33 are high-performance CMOS static RAMs organized as 1024K words by 8 bits.

Features

  • High Speed.
  • 55 ns and 70 ns availability.
  • Voltage range:.
  • CY62158CV25: 2.2V.
  • 2.7V.
  • CY62158CV30: 2.7V.
  • 3.3V.
  • CY62158CV33: 3.0V.
  • 3.6V.
  • Ultra low active power.
  • Typical active current: 1.5 mA @ f = 1 MHz.
  • Typical active current: 5.5 mA @ f = fmax(70 ns speed) Low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power-down when desel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY62158CV25_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com CY62158CV25/30/33 MoBL™ 1024K x 8 MoBL Static RAM Features • High Speed — 55 ns and 70 ns availability • Voltage range: — CY62158CV25: 2.2V–2.7V — CY62158CV30: 2.7V–3.3V — CY62158CV33: 3.0V–3.6V • Ultra low active power — Typical active current: 1.5 mA @ f = 1 MHz • • • • — Typical active current: 5.5 mA @ f = fmax(70 ns speed) Low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power-down when deselected CMOS for optimum speed/power in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling.
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