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CY62156ESL - 8-Mbit (512 K x 16) Static RAM

Description

The CY62156ESL is a high performance CMOS static RAM organized as 512K words by 16 bits.

Features

  • High Speed: 45 ns.
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V.
  • Ultra Low Standby Power.
  • Typical standby current: 2 A.
  • Maximum standby current: 8 A.
  • Ultra Low Active Power.
  • Typical active current: 1.8 mA at f = 1 MHz.
  • Easy Memory Expansion with CE1, CE2, and OE Features.
  • Automatic Power Down when Deselected.
  • CMOS for Optimum Speed and Power.
  • Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) packages Functional.

📥 Download Datasheet

Datasheet preview – CY62156ESL

Datasheet Details

Part number CY62156ESL
Manufacturer Cypress Semiconductor
File Size 382.76 KB
Description 8-Mbit (512 K x 16) Static RAM
Datasheet download datasheet CY62156ESL Datasheet
Additional preview pages of the CY62156ESL datasheet.

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Full PDF Text Transcription

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CY62156ESL MoBL® 8-Mbit (512 K × 16) Static RAM 8-Mbit (512 K × 16) Static RAM Features ■ High Speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra Low Standby Power ❐ Typical standby current: 2 A ❐ Maximum standby current: 8 A ■ Ultra Low Active Power ❐ Typical active current: 1.8 mA at f = 1 MHz ■ Easy Memory Expansion with CE1, CE2, and OE Features ■ Automatic Power Down when Deselected ■ CMOS for Optimum Speed and Power ■ Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) packages Functional Description The CY62156ESL is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current.
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