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CY62156ESL Datasheet 8-mbit (512 K X 16) Static Ram

Manufacturer: Cypress (now Infineon)

Overview: CY62156ESL MoBL® 8-Mbit (512 K × 16) Static RAM 8-Mbit (512 K × 16) Static.

General Description

The CY62156ESL is a high performance CMOS static RAM organized as 512K words by 16 bits.

This device

Key Features

  • High Speed: 45 ns.
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V.
  • Ultra Low Standby Power.
  • Typical standby current: 2 A.
  • Maximum standby current: 8 A.
  • Ultra Low Active Power.
  • Typical active current: 1.8 mA at f = 1 MHz.
  • Easy Memory Expansion with CE1, CE2, and OE Features.
  • Automatic Power Down when Deselected.
  • CMOS for Optimum Speed and Power.
  • Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) packages Functional.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY62157CV25 512K x 16 Static RAM
CY62157CV30 512K x 16 Static RAM
CY62157CV33 512K x 16 Static RAM
CY62157DV18 8M (512K x 16) Static RAM
CY62157DV20 8M (512K x 16) Static RAM
CY62157DV30 8-Mbit (512K x 16) MoBL Static RAM
CY62157E 8-Mbit (512 K x 16) Static RAM
CY62157ESL 8-Mbit (512 K x 16) Static RAM
CY62157EV18 8-Mbit (512 K x 16) Static RAM
CY62157EV30 8-Mbit (512 K x 16) Static RAM

CY62156ESL Distributor