CY62156ESL
Overview
- High Speed: 45 ns
- Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
- Ultra Low Standby Power ❐ Typical standby current: 2 A ❐ Maximum standby current: 8 A
- Ultra Low Active Power ❐ Typical active current: 1.8 mA at f = 1 MHz
- Easy Memory Expansion with CE1, CE2, and OE Features
- Automatic Power Down when Deselected
- CMOS for Optimum Speed and Power
- Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) packages Functional Description The CY62156ESL is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable
