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CY7C109 CY7C1009
128K x 8 Static RAM
Features
• High speed — tAA = 10 ns • Low active power — 1017 mW (max., 12 ns) • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2, and OE options active HIGH chip enable (CE2), an active LOW output enable (OE), and three-state drivers. Writing to the device is accomplished by taking chip enable one (CE1) and write enable (WE) inputs LOW and chip enable two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).
CY7C1009 Datasheet
