Description
The CY7C109B / CY7C1009B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits.
Features
- High speed.
- tAA = 12 ns.
- Low active power.
- 495 mW (max. 12 ns).
- Low CMOS standby power.
- 55 mW (max. ) 4 mW.
- 2.0V Data Retention.
- Automatic power-down when deselected.
- TTL-compatible inputs and outputs.
- Easy memory expansion with CE1, CE2, and OE options put Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip En.
CY7C1009B Datasheet
