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CY7C107 - (CY7C107 / CY7C1007) 1M x 1 Static RAM

Description

The CY7C107 and CY7C1007 are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit.

Features

  • High speed.
  • tAA = 12 ns.
  • CMOS for optimum speed/power.
  • Low active power.
  • 825 mW.
  • Low standby power.
  • 275 mW.
  • 2.0V data retention (optional).
  • 100 µW.
  • Automatic power-down when deselected.
  • TTL-compatible inputs and outputs memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more th.

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Full PDF Text Transcription

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www.DataSheet4U.com CY7C107 CY7C1007 1M x 1 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 275 mW • 2.0V data retention (optional) — 100 µW • Automatic power-down when deselected • TTL-compatible inputs and outputs memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected. Writing to the devices is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).
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