Description
The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits.
Features
- High speed.
- tAA = 12 ns.
- CMOS for optimum speed/power.
- Low active power.
- 495 mW.
- Low standby power.
- 275 mW.
- 2.0V data retention (optional).
- 100 µW.
- Automatic power-down when deselected.
- TTL-compatible inputs and outputs Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the.
CY7C1006B Datasheet
