Datasheet Summary
1CY7C1006B
CY7C106B CY7C1006B
256K x 4 Static RAM
Features
- High speed
- tAA = 12 ns
- CMOS for optimum speed/power
- Low active power
- 495 mW
- Low standby power
- 275 mW
- 2.0V data retention (optional)
- 100 µW
- Automatic power-down when deselected
- TTL-patible inputs and outputs Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. Writing to the devices is acplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3) is then written into the location specified on the...
