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CY7C1006B Datasheet 256k X 4 Static Ram

Manufacturer: Cypress (now Infineon)

Overview: 1CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM.

General Description

The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits.

Easy memory expansion is provided by an active LOW Chip Logic Block Diagram Pin Configuration SOJ Top View A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 CE OE GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 INPUT BUFFER A1 A2 A3 A4 A5 A6 A7 A8 A9 ROW DECODER SENSE AMPS I/O3 I/O2 I/O1 I/O0 VCC A17 A16 A15 A14 A13 A12 A11 NC I/O3 I/O2 I/O1 I/O0 WE C106B–2 512 x 512 x 4 ARRAY COLUMN DECODER POWER DOWN CE WE OE C106B–1 Selection Guide 7C106B-12 7C1006B-12 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum Standby Curren

Key Features

  • High speed.
  • tAA = 12 ns.
  • CMOS for optimum speed/power.
  • Low active power.
  • 495 mW.
  • Low standby power.
  • 275 mW.
  • 2.0V data retention (optional).
  • 100 µW.
  • Automatic power-down when deselected.
  • TTL-compatible inputs and outputs Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the.

CY7C1006B Distributor

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