CY7C1011BV33 ram equivalent, 128k x 16 static ram.
* 3.0
– 3.6V Operation
* High speed — tAA = 12, 15 ns
* CMOS for optimum speed/power
* Low active power — 684 mW (Max.)
* Automatic po.
of read and write modes. The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write oper.
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