CY7C1021BV33 ram equivalent, 64k x 16 static ram.
* 3.3V operation (3.0V
–3.6V)
* High speed — tAA = 10/12/15 ns
* CMOS for optimum speed/power
* Low Active Power (L version) — 576 mW (max..
of read and write modes. The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write oper.
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