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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18 36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features • Separate independ

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1CY7C1380BV25 PRELIMINARY CY7C1380BV25 CY7C1382BV25 512K x 36 / 1 Mb x 18 Pipelined SRAM Features • • • • • • • • • • • Fast clock speed: 200,166,

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18 36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features • Separate independ

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1CY 7C14 0 fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static Ram Features • True Dual-Ported memory cells which allow simultaneo

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage (RBE = 10 Ohms) Emitter-Base Voltage Collector Current - Contin

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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CY7C4221 CY7C42311 K / 2 K × 9 Synchronous FIFOs CY7C4221 / CY7C4231 1 K / 2 K × 9 Synchronous FIFOs 1 K / 2 K × 9 Synchronous FIFOs Features ■ High

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CY7C25422KV18 72-Mbit QDR® II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) with ODT 72-Mbit QDR® II+ SRAM Two-Word Burst Architecture (

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CY7C1460SV25 CY7C1462SV25 36-Mbit (1M × 36/2M × 18) Pipelined SRAM with NoBL™ Architecture 36-Mbit (1M × 36/2M × 18) Pipelined SRAM with NoBL™ Archit

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CY7C25632KV18 CY7C25652KV18 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ SRAM Four-Word Burs

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BCY70 BCY71 BCY72 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (

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CY7C2262XV18/CY7C2264XV18 36-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ Xtreme SRAM Two

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CY7C4425/4205/4215 CY7C4225/4235/4245 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Features ■ High speed, low power, first-in first-out (FIFO) memories

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www.DataSheet4U.com PREMILINARY CY7C1302DV25 9-Mbit Burst of Two Pipelined SRAMs with QDR™ Architecture Features • Separate independent Read and Wr

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Me

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