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CY7C10612GE - 16-Mbit (1M x 16) Static RAM

Download the CY7C10612GE datasheet PDF (CY7C10612G included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 16-mbit (1m x 16) static ram.

Description

The CY7C10612G and CY7C10612GE are high performance CMOS fast static RAM devices with embedded ECC.

These devices are offered in single chip enable option.

The CY7C10612GE device includes an error indication pin that signals an error-detection and correction event during a read cycle.

Features

  • High speed.
  • tAA = 10 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Low active power.
  • ICC = 90 mA typical.
  • Low CMOS standby power.
  • ISB2 = 20 mA typical.
  • Operating voltages of 3.3 ± 0.3 V.
  • 1.0 V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Available in Pb-free 54-pin TSOP II package Functional.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C10612G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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CY7C10612G CY7C10612GE 16-Mbit (1M × 16) Static RAM 16-Mbit (1M × 16) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Low active power ❐ ICC = 90 mA typical ■ Low CMOS standby power ❐ ISB2 = 20 mA typical ■ Operating voltages of 3.3 ± 0.3 V ■ 1.0 V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Available in Pb-free 54-pin TSOP II package Functional Description The CY7C10612G and CY7C10612GE are high performance CMOS fast static RAM devices with embedded ECC. These devices are offered in single chip enable option.
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