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CY7C10612GE Datasheet - Cypress Semiconductor

16-Mbit (1M x 16) Static RAM

CY7C10612GE Features

* High speed

* tAA = 10 ns

* Embedded error-correcting code (ECC) for single-bit error correction

* Low active power

* ICC = 90 mA typical

* Low CMOS standby power

* ISB2 = 20 mA typical

* Operating voltages of 3.3 ± 0.3 V

* 1.0 V data retention

* Transistor-t

CY7C10612GE General Description

The CY7C10612G and CY7C10612GE are high performance CMOS fast static RAM devices with embedded ECC. These devices are offered in single chip enable option. The CY7C10612GE device includes an error indication pin that signals an error-detection and correction event during a read cycle. To write to th.

CY7C10612GE Datasheet (747.76 KB)

Preview of CY7C10612GE PDF

Datasheet Details

Part number:

CY7C10612GE

Manufacturer:

Cypress Semiconductor

File Size:

747.76 KB

Description:

16-mbit (1m x 16) static ram.

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CY7C10612GE 16-Mbit Static RAM Cypress Semiconductor

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