CY7C10612GN Description
The CY7C1061GN/CY7C10612GN is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19).
CY7C10612GN Key Features
- High speed
- tAA = 10 ns/15 ns
- Low active power
- ICC = 90 mA at 100 MHz
- Low CMOS standby current
- ISB2 = 20 mA (typ)
- Operating voltages of 2.2 V to 3.6 V
- 1.0 V data retention
- Automatic power down when deselected
- TTL patible inputs and outputs