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CY7C10612GN - 16-Mbit (1M words x 16 bit) Static RAM

Download the CY7C10612GN datasheet PDF. This datasheet also covers the CY7C1061GN variant, as both devices belong to the same 16-mbit (1m words x 16 bit) static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY7C1061GN/CY7C10612GN is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits.

To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.

Key Features

  • High speed.
  • tAA = 10 ns/15 ns.
  • Low active power.
  • ICC = 90 mA at 100 MHz.
  • Low CMOS standby current.
  • ISB2 = 20 mA (typ).
  • Operating voltages of 2.2 V to 3.6 V.
  • 1.0 V data retention.
  • Automatic power down when deselected.
  • TTL compatible inputs and outputs.
  • Easy memory expansion with CE1 and CE2 features.
  • Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages.
  • Offered in dual Chip Enable options Functional Descr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1061GN-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C1061GN/CY7C10612GN 16-Mbit (1M words × 16 bit) Static RAM 16-Mbit (1M words × 16 bit) Static RAM Features ■ High speed ❐ tAA = 10 ns/15 ns ■ Low active power ❐ ICC = 90 mA at 100 MHz ■ Low CMOS standby current ❐ ISB2 = 20 mA (typ) ■ Operating voltages of 2.2 V to 3.6 V ■ 1.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages ■ Offered in dual Chip Enable options Functional Description The CY7C1061GN/CY7C10612GN is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.