CY7C10612GE Description
The CY7C10612G and CY7C10612GE are high performance CMOS fast static RAM devices with embedded ECC. These devices are offered in single chip enable option. The CY7C10612GE device includes an error indication pin that signals an error-detection and correction event during a read cycle.
CY7C10612GE Key Features
- High speed
- tAA = 10 ns
- Embedded error-correcting code (ECC) for single-bit error correction
- Low active power
- ICC = 90 mA typical
- Low CMOS standby power
- ISB2 = 20 mA typical
- Operating voltages of 3.3 ± 0.3 V
- 1.0 V data retention
- Transistor-transistor logic (TTL) patible inputs and outputs