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CY7C10612GN Datasheet 16-Mbit (1M words x 16 bit) Static RAM

Manufacturer: Cypress (now Infineon)

Overview: CY7C1061GN/CY7C10612GN 16-Mbit (1M words × 16 bit) Static RAM 16-Mbit (1M words × 16 bit) Static.

Download the CY7C10612GN datasheet PDF. This datasheet also includes the CY7C1061GN variant, as both parts are published together in a single manufacturer document.

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General Description

The CY7C1061GN/CY7C10612GN is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits.

To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.

If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19).

Key Features

  • High speed.
  • tAA = 10 ns/15 ns.
  • Low active power.
  • ICC = 90 mA at 100 MHz.
  • Low CMOS standby current.
  • ISB2 = 20 mA (typ).
  • Operating voltages of 2.2 V to 3.6 V.
  • 1.0 V data retention.
  • Automatic power down when deselected.
  • TTL compatible inputs and outputs.
  • Easy memory expansion with CE1 and CE2 features.
  • Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages.
  • Offered in dual Chip Enable options Functional Descr.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY7C10612G 16-Mbit (1M x 16) Static RAM
CY7C10612GE 16-Mbit (1M x 16) Static RAM
CY7C10612DV33 16-Mbit (1M x 16) Static RAM
CY7C1061AV33 16-Mbit (1 M 횞 16) Static RAM
CY7C1061DV18 16-Mbit (1M x 16) Static RAM
CY7C1061GN 16-Mbit (1M words x 16 bit) Static RAM
CY7C1062DV33 16 Mbit (512K x 32) Static RAM
CY7C1062G 16-Mbit (512 K words x 32 bits) Static RAM
CY7C1062GE 16-Mbit (512 K words x 32 bits) Static RAM
CY7C1069AV33 2M x 8 Static RAM