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CY7C1069GE - 16-Mbit (2M words x 8 bit) Static RAM

Download the CY7C1069GE datasheet PDF (CY7C1069G included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 16-mbit (2m words x 8 bit) static ram.

Description

The CY7C1069G and CY7C1069GE are dual chip enable high-performance CMOS fast static RAM devices with embedded ECC.

The CY7C1069G device is available in standard pin configurations.

Features

  • High speed.
  • tAA = 10 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Low active and standby currents.
  • ICC = 90 mA typical at 100 MHz.
  • ISB2 = 20 mA typical.
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Available in Pb-free 54-pin TSOP II, and 48.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1069G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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CY7C1069G CY7C1069GE 16-Mbit (2M words × 8 bit) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed ❐ tAA = 10 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Low active and standby currents ❐ ICC = 90 mA typical at 100 MHz ❐ ISB2 = 20 mA typical ■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ 1.0-V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Available in Pb-free 54-pin TSOP II, and 48-ball VFBGA packages Functional Description The CY7C1069G and CY7C1069GE are dual chip enable high-performance CMOS fast static RAM devices with embedded ECC.
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