Datasheet4U Logo Datasheet4U.com

CY7C1069AV33 - 2M x 8 Static RAM

This page provides the datasheet information for the CY7C1069AV33, a member of the CY7 2M x 8 Static RAM family.

Datasheet Summary

Description

of Read and Write modes.

The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a Write operation (CE1 LOW, CE2 HIGH, and WE LOW).

Features

  • High speed.
  • tAA = 8, 10, 12 ns.
  • Low active power.
  • 1080 mW (max. ).
  • Operating voltages of 3.3 ± 0.3V.
  • 2.0V data retention.
  • Automatic power-down when deselected.
  • TTL-compatible inputs and outputs.
  • Easy memory expansion with CE1 and CE2 features device is accomplished by enabling the chip (by taking CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. Reading from the device is accomplished by enabling the chip (CE1.

📥 Download Datasheet

Datasheet preview – CY7C1069AV33

Datasheet Details

Part number CY7C1069AV33
Manufacturer Cypress Semiconductor
File Size 385.89 KB
Description 2M x 8 Static RAM
Datasheet download datasheet CY7C1069AV33 Datasheet
Additional preview pages of the CY7C1069AV33 datasheet.

📁 Similar Datasheet

  • CY7C1061DV33 - 16-Mbit (1 M X 16) Static RAM (Cypress)
  • CY7C1061G - 16-Mbit (1 M words x 16 bit) Static RAM (Cypress)
  • CY7C106D - 1-Mbit (256K x 4) Static RAM (Cypress)
  • CY7C1006D - 1-Mbit (256K x 4) Static RAM (Cypress)
  • CY7C1011G - 2-Mbit (128K words x 16 bit) Static RAM (Cypress)
  • CY7C1041G - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1041GE - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1041GN - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
  • CY7C1049GN - 4-Mbit (512K words x 8 bit) Static RAM (Cypress)
  • CY7C131AE - 1K/2K x 8 Dual-Port Static RAM (Cypress)
Other Datasheets by Cypress Semiconductor

Full PDF Text Transcription

Click to expand full text
CY7C1069AV33 2M x 8 Static RAM Features • High speed — tAA = 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features device is accomplished by enabling the chip (by taking CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. Reading from the device is accomplished by enabling the chip (CE1 LOW and CE2 HIGH) as well as forcing the Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. See the truth table at the back of this data sheet for a complete description of Read and Write modes.
Published: |