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CY7C1069GE - 16-Mbit (2M words x 8 bit) Static RAM

Download the CY7C1069GE datasheet PDF. This datasheet also covers the CY7C1069G variant, as both devices belong to the same 16-mbit (2m words x 8 bit) static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY7C1069G and CY7C1069GE are dual chip enable high-performance CMOS fast static RAM devices with embedded ECC.

The CY7C1069G device is available in standard pin configurations.

Key Features

  • High speed.
  • tAA = 10 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Low active and standby currents.
  • ICC = 90 mA typical at 100 MHz.
  • ISB2 = 20 mA typical.
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Available in Pb-free 54-pin TSOP II, and 48.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1069G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY7C1061DV33 16-Mbit (1 M X 16) Static RAM Cypress
CY7C1061G 16-Mbit (1 M words x 16 bit) Static RAM Cypress
CY7C106D 1-Mbit (256K x 4) Static RAM Cypress
CY7C1006D 1-Mbit (256K x 4) Static RAM Cypress
CY7C1011G 2-Mbit (128K words x 16 bit) Static RAM Cypress

Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C1069G 16-Mbit (2M words x 8 bit) Static RAM
CY7C1069AV33 2M x 8 Static RAM
CY7C1069DV33 16-Mbit (2M x 8) Static RAM
CY7C10612DV33 16-Mbit (1M x 16) Static RAM
CY7C10612G 16-Mbit (1M x 16) Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C1069G CY7C1069GE 16-Mbit (2M words × 8 bit) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed ❐ tAA = 10 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Low active and standby currents ❐ ICC = 90 mA typical at 100 MHz ❐ ISB2 = 20 mA typical ■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ 1.0-V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Available in Pb-free 54-pin TSOP II, and 48-ball VFBGA packages Functional Description The CY7C1069G and CY7C1069GE are dual chip enable high-performance CMOS fast static RAM devices with embedded ECC.