CY7C1148KV18
CY7C1148KV18 is 18-Mbit DDR II+ SRAM Two-Word Burst Architecture manufactured by Cypress.
CY7C1148KV18/CY7C1150KV18
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
Features
- 18-Mbit density (1M × 18, 512K × 36)
- 450-MHz clock for high bandwidth
- Two-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces (data transferred at
900 MHz) at 450 MHz
- Available in 2.0 clock cycle latency
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Data valid pin (QVLD) to indicate valid data on the output
- Synchronous internally self-timed writes
- DDR II+ operates with 2.0 cycle read latency when DOFF is asserted HIGH
- Operates similar to DDR I device with one cycle read latency when DOFF is asserted LOW
- Core VDD = 1.8V ± 0.1 V; I/O VDDQ = 1.4 V to VDD[1]
- Supports both 1.5 V and 1.8 V I/O supply
- HSTL inputs and...
