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CY7C1311KV18 Datasheet

Manufacturer: Cypress (now Infineon)
CY7C1311KV18 datasheet preview

Datasheet Details

Part number CY7C1311KV18
Datasheet CY7C1311KV18-CypressSemiconductor.pdf
File Size 657.31 KB
Manufacturer Cypress (now Infineon)
Description 18-Mbit QDR II SRAM Four-Word Burst Architecture
CY7C1311KV18 page 2 CY7C1311KV18 page 3

CY7C1311KV18 Overview

 CY7C1311KV18/CY7C1911KV18 CY7C1313KV18/CY7C1315KV18 18-Mbit QDR® II SRAM Four-Word Burst Architecture 18-Mbit QDR® II SRAM Four-Word Burst.

CY7C1311KV18 Key Features

  • Separate independent read and write data ports
  • Supports concurrent transactions
  • 333-MHz clock for high bandwidth
  • Four-word burst for reducing address bus frequency
  • Double data rate (DDR) interfaces on both read and write ports
  • Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
  • Two Input Clocks for Output Data (C and C) to minimize Clock
  • Echo clocks (CQ and CQ) simplify data capture in high speed
  • Single multiplexed address input bus latches address inputs
Cypress (now Infineon) logo - Manufacturer

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CY7C1311KV18 Distributor

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