CY7C25422KV18 Overview
Key Features
- Separate independent read and write data ports ❐ Supports concurrent transactions
- 333 MHz clock for high bandwidth
- Two-word burst for reducing address bus frequency
- Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 666 MHz) at 333 MHz
- Available in 2.0 clock cycle latency
- Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only
- Echo clocks (CQ and CQ) simplify data capture in high speed systems
- Data valid pin (QVLD) to indicate valid data on the output
- On-Die Termination (ODT) feature ❐ Supported for D[x:0], BWS[x:0], and K/K inputs
- Single multiplexed address input bus latches address inputs for both read and write ports
