CY7C2245KV18
Overview
- Separate independent read and write data ports ❐ Supports concurrent transactions
- 450 MHz clock for high bandwidth
- Four-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz
- Available in 2.0 clock cycle latency
- Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only
- Echo clocks (CQ and CQ) simplify data capture in high speed systems
- Data valid pin (QVLD) to indicate valid data on the output
- On-die termination (ODT) feature ❐ Supported for D[x:0], BWS[x:0], and K/K inputs
- Single multiplexed address input bus latches address inputs for read and write ports
