CY7C1312KV18
CY7C1312KV18 is 18-Mbit QDR II SRAM Two-Word Burst Architecture manufactured by Cypress.
CY7C1312KV18/CY7C1314KV18
18-Mbit QDR® II SRAM Two-Word Burst Architecture
18-Mbit QDR® II SRAM Two-Word Burst Architecture
Features
- Separate independent read and write data ports
- Supports concurrent transactions
- 333 MHz clock for high bandwidth
- Two-word burst on all accesses
- Double-data rate (DDR) interfaces on both read and write ports
(data transferred at 666 MHz) at 333 MHz
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Single multiplexed address input bus latches address inputs for both read and write ports
- Separate port selects for depth expansion
- Synchronous internally self-timed writes
- QDR® II operates with 1.5 cycle read latency when DOFF is asserted HIGH
- Operates similar to QDR I device with one cycle read latency when DOFF is asserted LOW
- Available in × 18, and × 36 configurations
- Full data coherency, providing most current data
- Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD
- Supports both 1.5 V and 1.8 V I/O supply
- Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
- Offered in both Pb-free and non Pb-free packages
- Variable drive HSTL output buffers
- JTAG 1149.1 patible test access port
- PLL for accurate data placement
Configurations
- 1M × 18...