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CY7C1320KV18 - 18-Mbit DDR II SRAM Two-Word Burst Architecture

Download the CY7C1320KV18 datasheet PDF (CY7C1316KV18 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 18-mbit ddr ii sram two-word burst architecture.

Description

The CY7C1316KV18, CY7C1916KV18, CY7C1318KV18, and CY7C1320KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture.

The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter.

Features

  • Configurations CY7C1316KV18.
  • 2 M × 8 CY7C1916KV18.
  • 2 M × 9 CY7C1318KV18.
  • 1 M × 18 CY7C1320KV18.
  • 512 K × 36 18-Mbit density (2 M × 8, 2 M × 9, 1 M × 18, 512 K × 36) 333-MHz clock for high bandwidth Two-word burst for reducing address bus frequency Double data rate (DDR) interfaces  (data transferred at 666 MHz) at 333 MHz Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only Two input clocks for out.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1316KV18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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 CY7C1316KV18, CY7C1916KV18 CY7C1318KV18, CY7C1320KV18 18-Mbit DDR II SRAM Two-Word Burst Architecture 18-Mbit DDR II SRAM Two-Word Burst Architecture Features ■ ■ ■ ■ ■ Configurations CY7C1316KV18 – 2 M × 8 CY7C1916KV18 – 2 M × 9 CY7C1318KV18 – 1 M × 18 CY7C1320KV18 – 512 K × 36 18-Mbit density (2 M × 8, 2 M × 9, 1 M × 18, 512 K × 36) 333-MHz clock for high bandwidth Two-word burst for reducing address bus frequency Double data rate (DDR) interfaces  (data transferred at 666 MHz) at 333 MHz Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches Echo clocks (CQ and CQ) simplify data capture in high-speed systems Synchronous internally self-timed writes DDR II operate
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