CY7C1320BV18 Overview
The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for Read and Write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K.
CY7C1320BV18 Key Features
- 300-MHz clock for high bandwidth
- 2-Word burst for reducing address bus frequency
- Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Synchronous internally self-timed writes
- 1.8V core power supply with HSTL inputs and outputs
- Variable drive HSTL output buffers