CY7C1511V18 - (CY7C15xxV18) SRAM 4-Word Burst Architecture

Cypress Semiconductor

Datasheet Details

Part number	CY7C1511V18
Manufacturer	Cypress Semiconductor
File Size	561.73 KB
Description	(CY7C15xxV18) SRAM 4-Word Burst Architecture
Datasheet	CY7C1511V18_CypressSemiconductor.pdf

The CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture.

Separate Independent Read and Write Data Ports.
Supports concurrent transactions.
250-MHz Clock for High Bandwidth.
4-Word Burst for reducing address bus frequency.
Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Two output clocks (C and C) accounts for clock skew and flight time mismatchi.

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Published: Oct 19, 2006 |