CY7C1911CV18

The CY7C1911CV18 is (CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture designed by Cypress Semiconductor.

Product Overview

Cypress Semiconductor

Part number	CY7C1911CV18, CY7C1311CV18
Manufacturer	Cypress Semiconductor
File Size	731.88 KB
Description	(CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
Datasheet	CY7C1311CV18_CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C1911CV18, CY7C1311CV18. Please refer to the document for exact specifications by model.
Additional preview pages of the CY7C1911CV18 datasheet.

The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture.

Configurations CY7C1311CV18.
2M x 8 CY7C1911CV18.
2M x 9 CY7C1313CV18.
1M x 18 CY7C1315CV18.
512K x 36 Separate independent read and write data ports.
Supports concurrent transactions 300 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges onl.

📁 Similar Datasheet

CY7C197BN - 256-Kbit (256K x 1) Static RAM (Cypress)
CY7C1006D - 1-Mbit (256K x 4) Static RAM (Cypress)
CY7C1011G - 2-Mbit (128K words x 16 bit) Static RAM (Cypress)
CY7C1041G - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1041GE - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1041GN - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1049GN - 4-Mbit (512K words x 8 bit) Static RAM (Cypress)
CY7C1061DV33 - 16-Mbit (1 M X 16) Static RAM (Cypress)

Other Datasheets by Cypress Semiconductor

Published: Dec 9, 2010 |