CY7C4265V
Key Features
- 3.3V operation for low power consumption and easy integration into low-voltage systems
- High-speed, low-power, first-in first-out (FIFO) memories
- 8K x 18 (CY7C4255V)
- 16K x 18 (CY7C4265V)
- 32K x 18 (CY7C4275V)
- 64K x 18 (CY7C4285V)
- 0.35 micron CMOS for optimum speed/power
- High-speed 100-MHz operation (10-ns read/write cycle times)
- Low power - ICC = 30 mA - ISB = 4 mA
- Fully asynchronous and simultaneous read and write operation
