FM28V102A - 1-Mbit (64 K x 16) F-RAM Memory

Datasheet Summary

Address inputs: The 16 address lines select one of 64K words in the F-RAM array.

A0 may be used for page mode read and write operations.

Write Enable: A write cycle begins when WE is asserted.

Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature:.
40 C to +85 C 44-pin thin small outline package (TSOP) Type II Restriction of hazardous substances (RoHS) compliant 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16.
Configurable as 128 K × 8 using UB and LB 14.
High-endurance 100 trillion (10 ) read/writes.
151-year data retention (see the Data Retention and Endurance table).
NoDel.

Cypress Semiconductor

Part number	FM28V102A
Manufacturer	Cypress Semiconductor
File Size	337.72 KB
Description	1-Mbit (64 K x 16) F-RAM Memory
Datasheet	FM28V102A Datasheet
Additional preview pages of the FM28V102A datasheet.

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FM28V102A 1-Mbit (64 K × 16) F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features ■ ■ ■ ■ ■ Low-voltage operation: VDD = 2.0 V to 3.

Published: Oct 8, 2014 |