GVT7C1325A - 256K x 18 Synchronous Flow Through Burst SRAM

This page provides the datasheet information for the GVT7C1325A, a member of the GVT71256E18 256K x 18 Synchronous Flow Through Burst SRAM family.

Datasheet Summary

Description

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high-valued resistors.

Features

Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns 3.3V.
5% and +10% power supply 2.5V or 3.3V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSSQ at all inputs and outputs Common data inputs and data outputs Byte Write Enable and G.

Cypress Semiconductor

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Datasheet Details

Part number	GVT7C1325A
Manufacturer	Cypress Semiconductor
File Size	685.75 KB
Description	256K x 18 Synchronous Flow Through Burst SRAM
Datasheet	GVT7C1325A Datasheet
Additional preview pages of the GVT7C1325A datasheet.

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Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) 325A CY7C1325A/GVT71256E18 256K x 18 Synchronous Flow-Through Burst SRAM Features • • • • • • • • • • • • • • • • Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns 3.3V –5% and +10% power supply 2.5V or 3.

Published: Apr 13, 2006 |