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GVT7C1325A, GVT71256E18 Datasheet - Cypress Semiconductor

GVT7C1325A 256K x 18 Synchronous Flow Through Burst SRAM

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Selection Guide 7C1325A-117 71256E18-7 Maximum Access Time (ns) Ma.

GVT7C1325A Features

* Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns

GVT71256E18_CypressSemiconductor.pdf

This datasheet PDF includes multiple part numbers: GVT7C1325A, GVT71256E18. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

GVT7C1325A, GVT71256E18

Manufacturer:

Cypress Semiconductor

File Size:

685.75 KB

Description:

256k x 18 synchronous flow through burst sram.

Note:

This datasheet PDF includes multiple part numbers: GVT7C1325A, GVT71256E18.
Please refer to the document for exact specifications by model.

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GVT7C1325A GVT71256E18 256K Synchronous Flow Through Burst SRAM Cypress Semiconductor

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