S29WS512P - Simultaneous Read/Write Flash

Features

Single 1.8 V read/program/erase (1.70.
1.95 V).
90 nm MirrorBit™ Technology.
Simultaneous Read/Write operation with zero latency.
Random page read access mode of 8 words with 20 ns intra page access time.
32 Word / 64 Byte Write Buffer.
Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively.
Four 16 Kword sectors at both top and bottom of memory array.
510/254/126 64Kword sectors (WS512/256/128P).
Programmable li.

S29WS512P simultaneous read/write flash by Cypress Semiconductor - Datasheet Preview

Datasheet Details

Part number	S29WS512P
Manufacturer	Cypress (now Infineon)
File Size	871.65 KB
Description	Simultaneous Read/Write Flash
Datasheet	S29WS512P Datasheet

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Other Datasheets by Cypress Semiconductor

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S29WS256P - Simultaneous Read/Write Flash
S29AL008D - Boot Sector Flash
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Full PDF Text Transcription

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S29WS512P S29WS256P S29WS128P 512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write Flash Features  Single 1.8 V read/program/erase (1.70–1.

Published: Mar 13, 2017 |