S29WS512P Datasheet - Cypress Semiconductor

Simultaneous Read/Write Flash

* Single 1.8 V read/program/erase (1.70

* 1.95 V)

* 90 nm MirrorBit™ Technology

* Simultaneous Read/Write operation with zero latency

* Random page read access mode of 8 words with 20 ns intra page access time

* 32 Word / 64 Byte Write Buffer

* Sixteen-bank architecture

S29WS512P

Cypress Semiconductor

871.65 KB

Simultaneous read/write flash.

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