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BTN3501I3 Datasheet High Speed Switching diode

Manufacturer: Cystech Electonics

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Datasheet Details

Part number BTN3501I3
Manufacturer Cystech Electonics
File Size 218.76 KB
Description High Speed Switching diode
Download BTN3501I3 Download (PDF)

Overview

CYStech Electronics Corp.

Low Vcesat NPN Epitaxial Planar Transistor BTN3501I3.

Key Features

  • Low VCE(sat).
  • High BVCEO.
  • Excellent current gain characteristics.
  • RoHS compliant package BVCEO IC RCESAT Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2009.02.04 Page No. : 1/5 80V 8A 60mΩ Symbol BTN3501I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power D.

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