Datasheet4U Logo Datasheet4U.com

BTN3501E3 Datasheet High Speed Switching Diode

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. .. Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No.

Datasheet Details

Part number BTN3501E3
Manufacturer Cystech Electonics
File Size 200.36 KB
Description High Speed Switching diode
Datasheet BTN3501E3_CystechElectonics.pdf

Key Features

  • Symbol BTN3501E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj.

More Datasheets from Cystech Electonics

Part Number Description
BTN3501I3 High Speed Switching diode
BTN3501J3 High Speed Switching diode
BTN3904A3 General Purpose NPN Epitaxial Planar Transistor
BTN3904N3 General Purpose NPN Epitaxial Planar Transistor
BTN3904S3 NPN Transistor
BTN1053L3 NPN Epitaxial Planar Transistor
BTN1053M3 NPN Epitaxial Planar Transistor
BTN2129A3 NPN Epitaxial Planar Transistor
BTN2129E3 NPN Epitaxial Planar Transistor
BTN2129T3 NPN Epitaxial Planar Transistor

BTN3501E3 Distributor