BTN3501E3 Description
CYStech Electronics Corp. 2004.08.18 Revised Date : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501E3 Low VCE(sat) High BVCEO Excellent current gain characteristics.
BTN3501E3 is High Speed Switching diode manufactured by Cystech Electonics.
| Part Number | Description |
|---|---|
| BTN3501I3 | High Speed Switching diode |
| BTN3501J3 | High Speed Switching diode |
| BTN3904A3 | General Purpose NPN Epitaxial Planar Transistor |
| BTN3904N3 | General Purpose NPN Epitaxial Planar Transistor |
| BTN3904S3 | NPN Transistor |
CYStech Electronics Corp. 2004.08.18 Revised Date : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501E3 Low VCE(sat) High BVCEO Excellent current gain characteristics.