BTN3501I3 Datasheet | Cystech Electonics

Features - Low VCE(sat) - High BVCEO - Excellent current gain characteristics - Ro HS pliant package BVCEO IC RCESAT Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2009.02.04 Page No. : 1/5 80V 8A 60mΩ Symbol Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1 1.5 20 83.3 6.25 150 -55~+150 Unit °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2009.02.04 Page No. :...