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BTN3501J3 Datasheet High Speed Switching Diode

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC VCESAT Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 1/7 80V 8A 0.6V (max.

Datasheet Details

Part number BTN3501J3
Manufacturer Cystech Electonics
File Size 259.13 KB
Description High Speed Switching diode
Datasheet BTN3501J3_CystechElectonics.pdf

Key Features

  • Low VCE(sat).
  • High BVCEO.
  • Excellent current gain characteristics.
  • RoHS compliant package Symbol BTN3501J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTN3501J3-XX-T3-S Package TO-252 (RoHS compliant package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank,.

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BTN3501J3 Distributor