* Low VCE(sat)
* High BVCEO
* Excellent current gain characteristics
* RoHS compliant package Symbol BTN3501J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTN3501J3-XX-T3-S Package TO-252 (RoHS compliant package) Shipping
BTN3501J3 Datasheet (259.13 KB)
BTN3501J3
Cystech Electonics
259.13 KB
High speed switching diode.
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC VCESAT Spec. No. : C606J3 Issued Date : 2003.10.07 Revised .
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