BTN6517N3 - High Voltage NPN Epitaxial Planar Transistor

Product Overview

Cystech Electonics

Part number	BTN6517N3
Manufacturer	Cystech Electonics
File Size	176.35 KB
Description	High Voltage NPN Epitaxial Planar Transistor
Datasheet	BTN6517N3 Datasheet
Additional preview pages of the BTN6517N3 datasheet.

High Breakdown Voltage:BVCEO≥350V.
Complementary to BTP6520N3 Symbol BTN6517N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 225 150 -55~+150 Unit V V V mA mW °C °C BTN6517N3 CYStek Product Specification CYStech Ele.

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Published: Mar 27, 2009 |