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MTA050P02DFJ6 - P-Channel Enhancement Mode MOSFET

Key Features

  • Low on-resistance.
  • Excellent thermal and electrical capabilities.
  • Pb-free lead plating and halogen-free package RDSON@VGS=-2.5V, ID=-3A RDSON@VGS=-1.8V, ID=-3A -20V -14.2A -5.2A 33.4mΩ(typ. ) 46.4mΩ(typ. ) 71.4mΩ(typ. ) Equivalent Circuit MTA050P02DFJ6 Outline DFNWB2×2-6L-J G：Gate S：Source D：Drain Ordering Information Device MTA050P02DFJ6-0-T1-G Package DFNWB2×2-6L-J (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment fri.

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Datasheet Details

Part number MTA050P02DFJ6
Manufacturer Cystech Electonics
File Size 418.02 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTA050P02DFJ6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C394DFJ6 Issued Date : 2015.09.03 Revised Date : Page No. : 1/9 -20V P-Channel Enhancement Mode MOSFET MTA050P02DFJ6 BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C RDSON@VGS=-4.5V, ID=-3A Features • Low on-resistance • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package RDSON@VGS=-2.5V, ID=-3A RDSON@VGS=-1.8V, ID=-3A -20V -14.2A -5.2A 33.4mΩ(typ.) 46.4mΩ(typ.) 71.4mΩ(typ.