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MTA06N03NJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • BVDSS ID RDS(ON) 25V 80A 6mΩ.
  • 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package & Halogen-free package Symbol MTA06N03NJ3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur.

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Datasheet Details

Part number MTA06N03NJ3
Manufacturer Cystech Electonics
File Size 304.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA06N03NJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C442J3 Issued Date : 2009.03.02 Revised Date : Page No. : 1/7 MTA06N03NJ3 Features BVDSS ID RDS(ON) 25V 80A 6mΩ • 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package Symbol MTA06N03NJ3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy@ L=0.