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MTA55N02N3 - 20V N-Channel Enhancement Mode MOSFET

Key Features

  • Simple drive requirement.
  • Small package outline.
  • Capable of 2.5V gate drive.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX)@VGS=4.5V, ID=3.6A RDSON(MAX)@VGS=2.5V, ID=3.1A 20V 3.6A 29mΩ(typ. ) 39mΩ(typ. ) Symbol MTA55N02N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device MTA55N02N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade :.

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Datasheet Details

Part number MTA55N02N3
Manufacturer Cystech Electonics
File Size 312.40 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTA55N02N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET Spec. No. : C323N3 Issued Date : 2013.12.27 Revised Date : Page No. : 1/8 MTA55N02N3 Features • Simple drive requirement • Small package outline • Capable of 2.5V gate drive • Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX)@VGS=4.5V, ID=3.6A RDSON(MAX)@VGS=2.5V, ID=3.1A 20V 3.6A 29mΩ(typ.) 39mΩ(typ.