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MTA65N20H8 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTA65N20H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Dynamic dv/dt rating.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package Symbol MTA65N20H8 Outline DFN5×6 Pin 1 G：Gate D：Drain S：Source MTA65N20H8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Spec. No. : C866H8 Issued Date : 2014.02.10 Revised Date : Page No. : 2/10 Limits U.

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Datasheet Details

Part number MTA65N20H8
Manufacturer Cystech Electonics
File Size 392.03 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA65N20H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C866H8 Issued Date : 2014.02.10 Revised Date : Page No. : 1/10 MTA65N20H8 Description BVDSS ID @VGS=10V RDSON(TYP) VGS=10V, ID=11A VGS=5V, ID=5A 200V 24A 74mΩ 74mΩ The MTA65N20H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTA65N20H8 Outline DFN5×6 Pin 1 G：Gate D：Drain S：Source MTA65N20H8 CYStek Product Specification CYStech Electronics Corp.